![]() ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve. Body Diode Forward Voltage Variation with iss 8 C oss rss Figure 10. Capacitance Characteristics GEN G S Figure 11. ![]() ![]() Breakdown Voltage Variation with Temperature MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 9. On-Resistance Variation with Gate Figure 4. On-Resistance Variation with Temperature -55° 10V DS 1.6 1.2 0.8 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. T, JUNCTION T EMPERATURE (☌) J Figure 3. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents. The input Voltage is specified for the VSIN source at 10mV. Because of the low collector current, there’s not much amplification, as is apparent in Figure 2: 10 nV peak (I don’t understand the input trace. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The 2N7000 has a nominal V TN of 2.1 Volts (V GS(th) on the data sheet). NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. ![]()
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